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A multilayer perovskite thin film resistive memory device has been developedcomprised of: a Pr0.7Ca0.3MnO3 (PCMO) perovskite oxide epitaxial layer on aYBCO bottom thin film electrode; a thin yttria stabilized zirconia (YSZ) bufferlayer grown on the PCMO layer, and a gold thin film top electrode. Themulti-layer thin film lattice structure has been characterized by XRD and TEManalyses showing a high quality heterostructure. I-AFM analysis indicated nanogranular conductivity distributed uniformly throughout the PCMO film surface.With the addition of the YSZ buffer layer, the pulse voltage needed to switchthe device is significantly reduced and the resistance-switching ratio isincreased compared to a non-buffered resistance memory device, which is veryimportant for the device fabrication. The magnetic field effect on themultilayer structure resistance at various temperatures shows CMR behavior forboth high and low resistance states implying a bulk material component to theswitch behavior.Comment: 16 pages, 4 figure

Buffer-Enhanced Electrical-Pulse-Induced Resistive Memory Effect in Thin Film Perovskites