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We investigated the dependence of giant tunnel magnetoresistance (TMR) on thethickness of an MgO barrier and on the annealing temperature of sputteredCoFeB/MgO/CoFeB magnetic tunnel junctions deposited on SiO2/Si wafers. Theresistance-area product exponentially increases with MgO thickness, indicatingthat the quality of MgO barriers is high in the investigated thickness range of1.15-2.4 nm. High-resolution transmission electron microscope images show thatannealing at 375 C results in the formation of crystalline CoFeB/MgO/CoFeBstructures, even though CoFeB electrodes are amorphous in the as-sputteredstate. The TMR ratio increases with annealing temperature and is as high as260% at room temperature and 403% at 5 K.Comment: 12 pages, 5 figure

Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperature