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An epitaxial heterojunction made of a p-type perovskite manganiteLa0.8Sr0.2MnO3 film and an n-type strontium titanate SrTiO3:Nb substrate hasbeen fabricated by the pulsed laser deposition technique. The I - Vcharacteristics and photovoltaic properties are measured under a UV lightirradiation in a wide temperature range down to 10 K. It is found that thejunction works as an efficient UV photodiode with a large external quantumefficiency of 28%. It is also demonstrated that the manganite film can be dopedwith a certain amount of holes by the photcarrier injection. The maximumsurface hole density is estimated to b 3.0 X 10^13 cm^-2

japanese journal of applied physics

Photocarrier Injection and Current–Voltage Characteristics of La0.8Sr0.2MnO3/SrTiO3:Nb Heterojunction at Low Temperature