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We report current-induced magnetization reversal in a ferromagneticsemiconductor-based magnetic tunnel junction (Ga,Mn)As/AlAs/(Ga,Mn)As preparedby molecular beam epitaxy on a p-GaAs(001) substrate. A change inmagneto-resistance that is asymmetric with respect to the current direction isfound with the excitation current of 10^6 A/cm^2. Contributions of bothunpolarized and spin-polarized components are examined, and we conclude thatthe partial magnetization reversal occurs in the (Ga,Mn)As layer of smallermagnetization with the spin-polarized tunneling current of 10^5 A/cm^2.Comment: 13 pages, 3 figure

Current-Induced Magnetization Reversal in a (Ga,Mn)As-Based Magnetic Tunnel Junction