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This letter reports the demonstration of 60 GHz harmonic optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a GaAs substrate. Using 10 GHz or 30 GHz local oscillator signals, we successfully up-convert optically transmitted 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing efficiencies on the bias conditions of the HEMT, we determine the optimum bias conditions for maximizing harmonic optoelectronic up-conversion efficiency.

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate