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Single-dot and multiple (2, 3, 18, and 37)-dot single electron transistors (SETs) based on the control of a two-dimensional electron gas (2DEG) with a recently proposed Schottky in-plane gate (IPG) and a newly introduced Schottky wrap gate (WPG) were successfully fabricated on AlGaAs/GaAs wafers using electron beam (EB) lithography and their transport properties were investigated. Each of the fabricated SETs showed Coulomb blockade-like conductance oscillation. In single-dot SETs, a strong correlation was found between the devicedimensions and the temperature limit of conductance oscillation. Conductance oscillation characteristics of multiple-dot SETs were complicated, and were notexplained by the classical Coulomb blockade theory. Based on a simplified theoretical analysis using computer simulation, it was shown that quantized energydue to electron confinement and dot-coupling can dominate the charging effect in the fabricated SETs

japanese journal of applied physics

Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas