Open AccessA New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions
Author(s) -
Takashi Mimura,
S. Hiyamizu,
Toshio Fujii,
Kazuo Nanbu
Publication year - 1980
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.1143/jjap.19.l225
Subject(s) - heterojunction , high electron mobility transistor , doping , field effect transistor , transistor , optoelectronics , materials science , fabrication , electron mobility , field (mathematics) , electron , microwave , condensed matter physics , electrical engineering , physics , medicine , quantum mechanics , engineering , pure mathematics , voltage , pathology , alternative medicine , mathematics
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