English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

BiFeO3 thin films have been grown on Pt/Ti/SiO2/Si substrates with pulsedlaser deposition using Au as the top electrode. The resistive switchingproperty of the Au/BiFeO3/Pt stack has been significantly improved by carefullytuning the oxygen pressure during the growth, and a large switching ratio of~4500 has been achieved. The deposition pressure modifies the concentration ofoxygen vacancies and the rectifying behavior of the Au/BiFeO3 junction, andconsequently influences the resistive switching behavior of the whole stack.The switching takes place homogeneously over the entire electrode, and shows along-term retention.

Control of rectifying and resistive switching behavior in BiFeO3 thin films