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A method for determining the type of charge carrier, electron or hole, whichis transferred from metal contacts to graphene, is described. The Dirac pointis found to shift toward more negative (positive) gate voltages for electron(hole) doping by shortening of the interelectrode spacing. The shift of theDirac point is accompanied by an enhancement of the electron-hole conductivityasymmetry. Experimentally determined carrier types may be explained in terms ofthe metal work functions modified by interactions with graphene.

Determination of Carrier Type Doped from Metal Contacts to Graphene by Channel-Length-Dependent Shift of Charge Neutrality Points