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Using a scanning electron microscope, we observed a reproducible, discretedistribution of secondary electron intensity stemming from an atomically thickgraphene film on a thick insulating substrate. The discrete distribution madeit possible to uniquely relate the secondary electron intensity to the numberof graphene layers. Furthermore, we found a distinct linear relationshipbetween the relative secondary electron intensity from graphene and the numberof layers, provided a low primary electron acceleration voltage was used. Basedon these observations, we propose a practical method to determine the number ofgraphene layers in a sample. This method is superior to the conventionaloptical method in its capability to characterize graphene samples withsub-micrometer squares in area on various insulating substrates.

Determination of the Number of Graphene Layers: Discrete Distribution of the Secondary Electron Intensity Derived from Individual Graphene Layers