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Electric conduction in thin graphite film was tuned by two gate electrodes toclarify how the gate electric field induces electric carriers in thin graphite.The graphite was sandwiched between two gate electrodes arranged in a top andbottom gate configuration. A scan of the top gate voltage generates aresistance peak in ambiploar response. The ambipolar peak is shifted by thebottom gate voltage, where the shift rate depends on the graphite thickness.The thickness-dependent peak shift was clarified in terms of the inter-layerscreening length to the electric field in the double-gated graphite film. Thescreening length of 1.2 nm was experimentally obtained.

Inter-Layer Screening Length to Electric Field in Thin Graphite Film