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This work is focused on determining the electrical resistance, which inducedby single domain wall in magnetic nanowire with a negligible defect. Theprovided model covers a wide range of nanowire's diameters. The obtained resultdemonstrates a few orders rapid reduction of the domain wall resistanceaccompanied by its possible deviations versus the diameter growth ranging from1.2 nm to 15.2 nm. The origin of these deviations, which are also identified asoscillations, is referred to the non-uniform electron scattering on the domainwall due to the intermixing electron scattering conditions: ballistic for onespin channel and quasi-ballistic for other one with opposite spin direction. Itmay happen when the domain wall width by value is approximately in between twolengths: a mean free path with the spin down and spin up. The indirect evidenceof this finding is also coming from the fact that homogeneous nanowires showsthe most valuable domain wall resistance oscillations by magnitude rather thansegmented magnetic nanowires. In addition to the approach, where DW width isconstant, the other reasonable model is used when the domain wall can beconstrained for some conditions. The same results are valid for magneticjunctions with domain wall. Finally, resistance simulation in the diffusiverange, when a diameter of the nanowire (or point-like junction) is larger thanany of spin resolved mean free path of electrons, successfully followsexperimental data for the single and double domain wall resistances availablein literature.

Application of the point-like contact model: Resistance Oscillations of  the Domain Wall in Magnetic Nanowires and Junctions due to Mean Free Path  Effects