English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We have applied density-functional theory (DFT) based calculations toinvestigate the size and strain effects on the electronic properties, such asband structures, energy gaps, and effective masses of the electron and thehole, in Si nanowires along the <110> direction with diameters up to 5 nm.Under uniaxial strain, we find the band gap varies with strain and thisvariation is size dependent. For the 1 ~ 2 nm wire, the band gap is a linearfunction of strain, while for the 2 ~ 4 nm wire the gap variation with strainshows nearly parabolic behavior. This size dependence of the gap variation withstrain is explained on the basis of orbital characters of the band edges. Inaddition we find that the expansive strain increases the effective mass of thehole, while compressive strain increases the effective mass of the electron.The study of size and strain effects on effective masses shows that effectivemasses of the electron and the hole can be reduced by tuning the diameter ofthe wire and applying appropriate strain.

AB INITIO STUDY OF SIZE AND STRAIN EFFECTS ON THE ELECTRONIC PROPERTIES OF Si NANOWIRES