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The resistivity (R) of low mobility dilute 2D-electron gas in a n-InGaAs/GaAsdouble quantum well (DQW) exhibits the monotonic 'insulating-like' temperaturedependence (dR/dT < 0) at T = 1.8 -- 70K in zero magnetic field. Thistemperature interval corresponds to a ballistic regime (kTtau/hbar > 0.1 --3.5) for our samples, and the electron density is on a 'insulating' side of theso-called B = 0 2D metal--insulator transition. We show that the observedlocalization and Landau quantization is due to the Sigma_xy(T)anomalousT-dependence.

international journal of nanoscience

TRANSPORT PROPERTIES OF 2D ELECTRON GAS IN AN n-<font>InGaAs</font>/<font>GaAs</font> DQW IN A VICINITY OF LOW MAGNETIC-FIELD-INDUCED HALL INSULATOR–QUANTUM HALL LIQUID TRANSITION

TRANSPORT PROPERTIES OF 2D ELECTRON GAS IN AN n-InGaAs/GaAs DQW IN A VICINITY OF LOW MAGNETIC-FIELD-INDUCED HALL INSULATOR–QUANTUM HALL LIQUID TRANSITION