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We discuss the possibility of diffusive conduction and thus of suppression ofshot noise by a factor 1/3 in mesoscopic semiconductor devices withtwo-dimensional and one-dimensional potential disorder, for which existingexperimental results do not provide a conclusive result. On the basis of ournumerical analysis, we conclude that it is quite difficult to achieve diffusivetransport over a reasonably wide parameter range, unless the device dimensionsare increased up to the macroscopic scale. In addition, in the case ofone-dimensional disorder, some mechanism capable of mode-mixing has to bepresent in order to reach or even approach the diffusive regime.

Is the regime with shot noise suppression by a factor 1/3 achievable in semiconductor devices with mesoscopic dimensions?