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We describe experimental and related theoretical work on the measurement ofthe Casimir force using semiconductor test bodies. This field of researchstarted in 2005 and several important and interesting results have already beenobtained. Specifically, the Casimir force or its gradient were measured in theconfiguration of an Au-coated sphere and different semiconductor surfaces. Itwas found that the force magnitude depends significantly on the replacement ofthe metal with a semiconductor and on the concentration of charge carriers inthe semiconductor material. Special attention is paid to the experiment on theoptical modulation of the Casimir force. In this experiment the differenceCasimir force between an Au-coated sphere and Si plate in the presence and inthe absence of laser light was measured. Possible applications of thisexperiment are discussed, specifically, for the realization of the pulsatingCasimir force in three-layer systems. Theoretical problems arising from thecomparison of the experimental data for the difference Casimir force with theLifshitz theory are analyzed. We consider the possibility to control themagnitude of the Casimir force in phase transitions of semiconductor materials.Experiments on measuring the Casimir force gradient between an Au-coated sphereand Si plate covered with rectangular corrugations of different character arealso described. Here, we discuss the interplay between the material propertiesand nontrivial geometry and the applicability of the proximity forceapproximation. The review contains comparison between different experiments andanalysis of their advantages and disadvantages.

Control of the Casimir Force Using Semiconductor Test Bodies