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Monte Carlo simulations have been performed for 855 MeV and 6.3 GeV electronschanneling in silicon single crystals at circular bent (111) planes. The aimwas to identify critical experimental parameters which effect thevolume-deflection and volume-capture characteristics. To these belongs theangular alignment of the crystal with respect to the nominal beam direction.The continuum potential picture has been utilized. The simulation results werecompared with experiments. It turns out that the assumption of an anticlasticbending of the crystal, bent on the principle of the quasi-mosaic effect, isnot required to reproduce the experimental observations.

the european physical journal. d, atomic, molecular and optical physics/the european physical journal. d, atomic, molecular, optical and plasma physics

Beam steering with quasi-mosaic bent silicon single crystals -- Computer  simulations for 855 MeV and 6.3 GeV electrons and comparison with experiments