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We report the observation of the steering of 855 MeV electrons by bentsilicon and germanium crystals at the MAinzer MIkrotron. 15 $\mu $m longcrystals, bent along (111) planes, were exploited to investigate orientationalcoherent effects. By using a piezo-actuated mechanical holder, which allowed toremotely change the crystal curvature, it was possible to study the steeringcapability of planar channeling and volume reflection vs. the curvature radiusand the atomic number, Z. For silicon, the channeling efficiency exceeds 35 %,a record for negatively charged particles. This was possible due to therealization of a crystal with a thickness of the order of the dechannelinglength. On the other hand, for germanium the efficiency is slightly below 10 %due to the stronger contribution of multiple scattering for a higher-Zmaterial. Nevertheless this is the first evidence of negative beam steering byplanar channeling in a Ge crystal. Having determined for the first time thedechanneling length, one may design a Ge crystal based on such knowledgeproviding nearly the same channeling efficiency of silicon. The presentedresults are relevant for crystal-based beam manipulation as well as for thegeneration of e.m. radiation in bent and periodically bent crystals.

Steering of Sub-GeV electrons by ultrashort Si and Ge bent crystals