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We present an $sp^3$ tight-binding model for the calculation of theelectronic and optical properties of wurtzite semiconductor quantum dots (QDs).The tight-binding model takes into account strain, piezoelectricity, spin-orbitcoupling and crystal-field splitting. Excitonic absorption spectra arecalculated using the configuration interaction scheme. We study the electronicand optical properties of InN/GaN QDs and their dependence on structuralproperties, crystal-field splitting, and spin-orbit coupling.

Spin-orbit coupling and crystal-field splitting in the electronic and optical properties of nitride quantum dots with a wurtzite crystal structure