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Nickel-doped tin selenide crystals can be grown using the direct vapour transport technique. This paper includes structural, electrical, and optical characterizations of SnSeNi0.2 crystals done by X-ray diffraction (XRD), energy-dispersive analysis of X-rays (EDAX), surface microstructure topography, Hall effect measurement carried out to determine type of material, Seebeck coefficient and calculation of power factor has been carried out from the data of thermoelectric power measurements and the ultraviolet–visible (UV-Vis) spectroscopic technique, respectively. The optical absorption spectrum was obtained in an UV-Vis–near-infrared (NIR) spectrometer in the range of 200–2500 nm. The UV-Vis spectroscopic technique has been used to calculate band gap, and the value of the band gap was found to be 0.84 eV in the visible region. Calculation of various optical parameters has been carried out.

Study of structural, electrical, and optical properties of nickel-doped tin selenide crystals