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The strong effect of weak interband illumination on tunneling transport indoped GaAs/AlAs superlattices was found under conditions of electric domainformation. The photoresponse at voltages below the threshold one (before thedomain formation) did not observe. The phenomenon is referred to strong carrierdepletion inside the triangular high-field domain. The domain modestransformations under the illumination were also found.

Anomalous Photoresponse of Heavily Doped GaAs/AlAs Superlattices with Electric Domains