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Al-$\delta$-GaAs structures are studied where tunneling to one or moresubbands of the 2D electron system of a near-surface delta-doped layer isobserved. Reflection of electrons at the threshold of the emission of LO-phononis observed. This phenomenon occurs when a new subband is involved in thetunneling process and when intersubband transitions of the electrons in a2D-system with the emission of LO-phonon are added to the inelastic tunnelingwithin a single subband. It is shown that, under the conditions of anintersubband polaron resonance, the reflection processes dominate duringtunneling into the delta-layer. If, however, tunneling from the delta-layeroccurs, the reflection processes are observed when two subbands are occupied.

Reflection of Electrons during Tunneling and an Intersubband Polaron in the 2D Electron System of a Delta-Layer in GaAs