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This communication presents a comparative study on the charge transport (intransient and steady state) in bulk n-type doped SiC-polytypes: 3C-SiC, 4H-SiCand 6H-SiC. The time evolution of the basic macrovariables: the electron driftvelocity and the non-equilibrium temperature are obtained theoretically byusing a Non-Equilibrium Quantum Kinetic Theory, derived from the method ofNonequilibrium Statistical Operator (NSO). The dependence on the intensity andorientation of the applied electric field of this macrovariables and mobilityare derived and analyzed. From the results obtained in this paper, the mostattractive of these semiconductors for applications requiring greaterelectronic mobility is the polytype 4H-SiC with the electric field appliedperpendicular to the c-axis.

Electron Mobility in Bulk n-Doped SiC-Polytypes 3C-SiC, 4H-SiC, and 6H-SiC: A Comparison