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Self-heating effects of picosecond optoelectronic switches based on verticalhigh-voltage structures with p-n-junctions (VPSS) operating in a high-frequencymode were theoretically studied for the first time. It is shown that strongtemperature dependence of the control radiation absorption coefficient $k(T)$is the main factor determining the maximum switching frequency $f_{max}$ andthe corresponding maximum crystal temperature $T_{max}$, as well asdistributions of temperature $T$ and current density $j$ over a device area. Atwo-dimensional analysis of the simplest electrothermal model of VPSS embeddedinto a double coaxial forming line showed that an increase in the switchingfrequency $f$ leads to displacement of current to device periphery, where thetemperature is minimal. However, distributions of $T$ and $j$ over the devicearea remain stable if $f < f_{max}$ and $T < T_{max}$. Of course, the values$f_{max}$ and $T_{max}$ depend on the energy of control radiation pulses, pulseswitching power and heat sink conditions. For VPSS based on nondirect-gapsemiconductors (Si, SiC), they varies within 20-120 kHz and 120-160 $^o C$,quite sufficient for practical application. However, VPSS based on direct-gapsemiconductors (GaAs, InP) are not actually suitable for operation inhigh-frequency modes due to too sharp dependence $k(T)$.

Power Nano- and Picosecond Optoelectronic Switches Based on High-Voltage Silicon Structures with p-n Junctions III. Self-heating effects