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Numerical simulation of switching process of high-voltage siliconphotodiodes, phototransistors and photothyristors those triggered-onhomogeneously over the area by picosecond laser pulses, has been performed forthe first time. The analysis of results allowed to obtain "empirical"relationship between key parameters of switches (energy of control pulses, aradiation absorption coefficient, the area of structures) and parameters thosecharacterizing the switching process in a circuit with the resistive load. Forsome of these relationship the approximate analytical formulas which seem to bequite adequate to the simulation results has been deduced. It is noted thatdistinctions between switching processes in structures of the three differenttypes become apparent only at long duration of voltage pulses at a final stagewhen the blocking capability of photodiodes and phototransistors is recovered.

Power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p-n-junctions. I. Physics of switching process