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The possibility of optimization of high voltage hybrid SIT-MOS transistors(HSMT) by local reduction of the lifetime near anode emitter and/or reductionof the anode emitter injection ability by three different ways has beeninvestigated using two-dimensional numerical simulation. It has been shown thatall of these methods proposed previously for optimization of insulated-gatebipolar transistor (IGBT) are physically equivalent and makes it possible toreduce turn-off energy losses $E_{off}$ in HSMT by 30-40%. Importantly thatenergy $E_{off}$ in optimized HSMT appears to be 15-35% less than in equivalenttrench IGBT under other equal conditions.

The effect of anode emitter injection capability on characteristics of hybrid SIT-MOS transistors