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We derive a model of localized edge states in the finite width strip fortwo-dimensional electron gas formed in the hybrid system of bismuth monolayerdeposited on the silicon interface and described by the nearly-free electronmodel with giant spin-orbit splitting. The edge states have the energydispersion in the bulk energy gap with the Dirac-like linear dependence on thequasimomentum and the spin polarization coupled to the direction ofpropagation, demonstrating the properties of topological insulator. Thetopological stability of edge states is confirmed by the calculations of the$Z_2$ invariant taken from the structure of the Pfaffian for the time reversaloperator for the filled bulk bands in the surface Brillouin zone which is shownto have a stable number of zeros with the variations of material parameters.The proposed properties of the edge states may support future advances inexperimental and technological applications of this new material innanoelectronics and spintronics.

Edge states and topological properties of electrons on the bismuth on silicon surface with giant spin-orbit coupling