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The magnetoresistance components $\rho_{xx}$ and $\rho_{xy}$ were measured intwo p-Si/SiGe/Si quantum wells that have an anisotropic g-factor in a tiltedmagnetic field as a function of temperature, field and tilt angle. Activationenergy measurements demonstrate the existence of a ferromagnetic-paramagnetic(F-P) transition for a sample with a hole density of$p$=2$\times10^{11}$\,cm$^{-2}$. This transition is due to crossing of the0$\uparrow$ and 1$\downarrow$ Landau levels. However, in another sample, with$p$=7.2$\times10^{10}$\,cm$^{-2}$, the 0$\uparrow$ and 1$\downarrow$ Landaulevels coincide for angles $\Theta$=0-70$^{\text{o}}$. Only for $\Theta$ >70$^{\text{o}}$ do the levels start to diverge which, in turn, results in theenergy gap opening.

Magnetoresistivity in a Tilted Magnetic Field in p-Si/SiGe/Si Heterostructures with an Anisotropic g-Factor: Part II