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The direct-current (dc) $\sigma_{xx}^{dc}$ and alternating-current (ac)$\sigma_{xx}^{ac}=\sigma_1-i\sigma_2$ conductivities of a wide (46 nm) GaAsquantum well with the bilayer electron density distribution are measured. It isfound that the magnetic field dependence of $\sigma_{xx}$ exhibits three setsof oscillations related to the transitions between Landau levels in symmetricand antisymmetric subbands and with the transitions occurring owing to theZeeman splitting of these subbands. The analysis of the frequency dependence ofthe ac conductivity and the $\sigma_1 / \sigma_2$ ratio demonstrates that theconductivity at the minima of oscillations is determined by the hoppingmechanism.

AC and DC Conductivities in an n-GaAs/AlAs Heterostructure with a Wide Quantum Well in the Integer Quantum Hall Effect Regime