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The results of the simulations by Monte Carlo method of graphene withstructural defects are presented.  The calculations are performed within an effective quantum field theory withnon-compact $3\hm + 1$--dimensional Abelian gauge field and $2\hm +1$--dimensional Kogut-Susskind fermions. It was found that defects shift thephase transition point semimetal-insulator towards higher values of a substratepermittivity.

The influence of defects on the conductivity of graphene within the effective theory approach