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The terahertz spectra of the dynamic conductivity and radiation absorptioncoefficient in germanium-silicon heterostructures with arrays of Ge hutclusters (quantum dots) have been measured for the first time in the frequencyrange of 0.3-1.2 THz at room temperature. It has been found that the effectivedynamic conductivity and effective radiation absorption coefficient in theheterostructure due to the presence of germanium quantum dots in it are muchlarger than the respective quantities of both the bulk Ge single crystal andGe/Si(001) without arrays of quantum dots. The possible microscopic mechanismsof the detected increase in the absorption in arrays of quantum dots have beendiscussed.

Absorption of Terahertz Radiation in Ge/Si(001) Heterostructures with Quantum Dots