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We report measurements of dm/dn in Si MOSFET, where m is the magnetization ofthe two-dimensional electron gas and n is its density. We extended the densityrange of measurements from well in the metallic to deep in the insulatingregion. The paper discusses in detail the conditions under which this extensionis justified, as well as the corrections one should make to extract dm/dnproperly. At low temperatures, dm/dn was found to be strongly nonlinear alreadyin weak magnetic fields, on a scale much smaller than the characteristicscales, expected for interacting two-dimensional electron gas. Surprisingly,this nonlinear behavior exists both in the dielectric, and in the metallicregion. These observations, we believe, provide evidence for strong coupling ofthe itinerant and localized electrons in Si-MOSFET.

Thermodynamic magnetization of two-dimensional electron gas measured over wide range of densities