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We present the results of local tunneling conductivity spatial distributiondetailed theoretical investigations in vicinity of impurity atom for a widerange of applied bias voltage. We observed Fano resonance in tunnelingconductivity resulting from interference between resonant tunneling channelthrough impurity energy level and direct tunneling channel between thetunneling contact leads. We have found that interference between tunnelingchannels strongly modifies form of tunneling conductivity measured by thescanning tunneling microscopy/spectroscopy (STM/STS) depending on the distancevalue from the impurity.

Spatial effects of Fano resonance in local tunneling conductivity in vicinity of impurity on semiconductor surface