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We present the results of detailed theoretical investigations of changes inlocal density of total electronic surface states in 2D anisotropic atomicsemiconductor lattice in vicinity of impurity atom for a wide range of appliedbias voltage. We have found that taking into account changes in density ofcontinuous spectrum states leads to the formation of a downfall at theparticular value of applied voltage when we are interested in the density ofstates above the impurity atom or even to a series of downfalls for the fixedvalue of the distance from the impurity. The behaviour of local density ofstates with increasing of the distance from impurity along the chain differsfrom behaviour in the direction perpendicular to the chain.

Spatial distribution of local density of states in vicinity of impurity on semiconductor surface