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The prospect of using high-voltage GaAs drift step-recovery diodes for the formation of subnanosecond pulses is shown. The electrical circuit of a generator is described, which provides (with a total efficiency of at least 25%) the formation of pulses at a load of 50 Ω with an amplitude of up to 550 V, a voltage rise time of 0.43 ns, a full width at half maximum of 0.73 ns, and a repetition frequency of up to 200 kHz.

A High-Voltage High-Frequency Subnanosecond Pulse Generator Based on Gallium Arsenide Drift Step-Recovery Diodes