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We developed the focused ion beam (FIB) and ion milling techniques for afabrication of the Bi_2Sr_2CaCu_2O_{8+\delta} (Bi-2212) stacked junctions within-plane size L_{ab} from several microns down to the submicron scale withoutdegradation of T_c. We found that behaviour of submicron junctions (L_{ab} < 1{\mu}m) is quite different from the bigger ones. The critical current densityis considerably suppressed, the hysteresis and multibranched structure of theIV characteristics are eliminated, the periodic structure of current peaksreproducibly appears on the IV curves at low temperatures. A period of thestructure, {\Delta}V, is consistent with the Coulomb charging energy of asingle pair, {\Delta}V = e/C with C the effective capacitance of the stack. Weconsider this behaviour to originate from the Coulomb blockade of the intrinsicJosephson tunneling in submicron Bi-2212 stacks.Comment: 13 pp, incl. 1 table and 4 fig

Experimental evidence for Coulomb charging effects in submicron Bi-2212 stacks