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We study the transport properties of a 2D electron gas in narrow GaAs quantumwells with AlAs/GaAs superlattice barriers. It is shown that the anisotropicpositive magnetoresistance observed in selectively doped semiconductorstructures in a parallel magnetic field is caused by the spatial modulation ofthe 2D electron gas.Comment: 4 pages, 3 figure

Anisotropic positive magnetoresistance of a nonplanar 2D electron gas in a parallel pagnetic field