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The absorption coefficient for surface acoustic waves in a piezoelectricinsulator in contact with a GaAs/AlGaAs heterostructure (with two-dimensionalelectron mobility $\mu= 1.3\times 10^5 cm^2/V\cdot s)$ at T=4.2K) via a smallgap has been investigated experimentally as a function of the frequency of thewave, the width of the vacuum gap, the magnetic field, and the temperature. Themagnetic field and frequency dependencies of the high-frequency conductivity(in the region 30-210 MHz) are calculated and analyzed. The experimentalresults can be explained if it assumed that there exists a fluctuationpotential in which current carrier localization occurs. The absorption of thesurface acoustic waves in an interaction with two-dimensional electronslocalized in the energy "tails" of Landau levels is discussed.Comment: RevTeX 6 pages+6 EPS pic

Electron localization in sound absorption oscillations in the quantum Hall effect regime