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Berry curvature is analogous to magnetic field but in momentum space and iscommonly present in materials with non-trivial quantum geometry. It endowsBloch electrons with transverse anomalous velocities to produce Hall-likecurrents even in the absence of a magnetic field. We report the directobservation of in situ tunable valley-selective Hall effect (VSHE), whereinversion symmetry, and thus the geometric phase of electrons, is controllableby an out-of-plane electric field. We use high-quality bilayer graphene with anintrinsic and tunable bandgap, illuminated by circularly polarized mid-infraredlight and confirm that the observed Hall voltage arises from anoptically-induced valley population. Compared with molybdenum disulfide, wefind orders of magnitude larger VSHE, attributed to the inverse scaling of theBerry curvature with bandgap. By monitoring the valley-selective Hallconductivity, we study Berry curvature's evolution with bandgap. This in situmanipulation of VSHE paves the way for topological and quantum geometricopto-electronic devices, such as more robust switches and detectors.

Tunable and giant valley-selective Hall effect in gapped bilayer graphene