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Defects in conventional semiconductors substantially lower thephotoluminescence (PL) quantum yield (QY), a key metric of optoelectronicperformance that directly dictates the maximum device efficiency.Two-dimensional (2D) transition metal dichalcogenides (TMDCs), such asmonolayer MoS2, often exhibit low PL QY for as-processed samples, which hastypically been attributed to a large native defect density. We show that the PLQY of as-processed MoS2 and WS2 monolayers reaches near-unity when they aremade intrinsic by electrostatic doping, without any chemical passivation.Surprisingly, neutral exciton recombination is entirely radiative even in thepresence of a high native defect density. This finding enables TMDC monolayersfor optoelectronic device applications as the stringent requirement of lowdefect density is eased.

Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors