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We report a bipolar field effect tunneling transistor that exploits toadvantage the low density of states in graphene and its one atomic layerthickness. Our proof-of-concept devices are graphene heterostructures withatomically thin boron nitride acting as a tunnel barrier. They exhibit roomtemperature switching ratios ~50, a value that can be enhanced further byoptimizing the device structure. These devices have potential for highfrequency operation and large scale integration.

Field-effect tunneling transistor based on vertical graphene heterostructures