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Graphene has been attracting great interest because of its distinctive bandstructure and physical properties. Today, graphene is limited to small sizesbecause it is produced mostly by exfoliating graphite. We grew large-areagraphene films of the order of centimeters on copper substrates by chemicalvapor deposition using methane. The films are predominantly single layergraphene with a small percentage (less than 5%) of the area having few layers,and are continuous across copper surface steps and grain boundaries. The lowsolubility of carbon in copper appears to help make this growth processself-limiting. We also developed graphene film transfer processes to arbitrarysubstrates, and dual-gated field-effect transistors fabricated on Si/SiO2substrates showed electron mobilities as high as 4050 cm2V-1s-1 at roomtemperature.

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils