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Black phosphorus (BP) offers considerable promise for infrared and visiblephotonics. Efficient tuning of the bandgap and higher subbands in BP bymodulation of the Fermi level or application of vertical electric fields hasbeen previously demonstrated, allowing electrical control of its above bandgapoptical properties. Here, we report modulation of the optical conductivitybelow the band-gap (5-15 um) by tuning the charge density in a two-dimensionalelectron gas (2DEG) induced in BP, thereby modifying its free carrier dominatedintraband response. With a moderate doping density of 7x10^12/cm2 we were ableto observe a polarization dependent epsilon-near-zero behavior in thedielectric permittivity of BP. The intraband polarization sensitivity isintimately linked to the difference in effective fermionic masses along the twocrystallographic directions, as confirmed by our measurements. Our resultssuggest the potential of multilayer BP to allow new optical functions foremerging photonics applications.

Tunable intraband optical conductivity and polarization-dependent epsilon-near-zero behavior in black phosphorus