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Phosphorus donor impurities in silicon are a promising candidate forsolid-state quantum computing due to their exceptionally long coherence timesand high fidelities. However, individual addressability of exchange coupleddonor qubits with separations ~15nm is challenging. Here we show that by usingatomic-precision lithography we can place a single P donor next to a 2Pmolecule 16(+/-1)nm apart and use their distinctive hyperfine couplingstrengths to address qubits at vastly different resonance frequencies. Inparticular the single donor yields two hyperfine peaks separated by97(+/-2.5)MHz, in contrast to the donor molecule which exhibits three peaksseparated by 262(+/-10)MHz. Atomistic tight-binding simulations confirm thelarge hyperfine interaction strength in the 2P molecule with an inter-donorseparation of ~0.7nm, consistent with lithographic STM images of the 2P siteduring device fabrication. We discuss the viability of using donor moleculesfor built-in addressability of electron spin qubits in silicon.

Addressable electron spin resonance using donors and donor molecules in silicon