English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

The exotic topological domains in ferroelectrics and multiferroics haveattracted extensive interest in recent years due to their novel functionalitiesand potential applications in nanoelectronic devices. One of the key challengesfor such applications is a realization of robust yet reversibly switchablenanoscale topological domain states with high density, wherein spontaneoustopological structures can be individually addressed and controlled. This hasbeen accomplished in our work using high density arrays of epitaxial BiFeO3(BFO) nanodots with lateral size as small as ~60 nm. We demonstrate varioustypes of spontaneous topological domain structures, including center-convergentdomains, center-divergent domains, and double-center domains, which are stableover sufficiently long time yet can be manipulated and reversibly switched byelectric field. The formation mechanisms of these topological domain states,assisted by the accumulation of compensating charges on the surface, have alsobeen revealed. These result demonstrated that these reversibly switchabletopological domain arrays are promising for applications in high densitynanoferroelectric devices such as nonvolatile memories

High density array of epitaxial BiFeO3 nanodots with robust and reversibly switchable topological domain states