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We report the successful electrical creation of spin polarization in p-typeSi at room temperature by using an epitaxial MgO(001) tunnel barrier andFe(001) electrode. Reflection high-energy electron diffraction observationsrevealed that epitaxial Fe/MgO(001) tunnel contacts can be grown on a (2 x 1)reconstructed Si surface whereas tunnel contacts grown on the (1 x 1) Sisurface were polycrystalline. Transmission electron microscopy images showed amore flat interface for the epitaxial Fe/MgO/Si compared to that of thepolycrystalline structure. For the Fe/MgO/p-Si devices, the Hanle and invertedHanle effects were clearly observed at 300 K by using a three-terminalconfiguration, proving that spin polarization can be induced in the Si at roomtemperature. Effective spin lifetimes deduced from the width of the Hanle curvewere 95 +/- 6 ps and 143 +/- 10 ps for the samples with polycrystalline andepitaxial MgO tunnel contacts, respectively. The observed difference can bequalitatively explained by the local magnetic field induced by the largerroughness of the interface of the polycrystalline sample. The sample withepitaxial Fe/MgO tunnel contact showed higher magnitude of the spinaccumulation with a nearly symmetric behavior with respect to the bias polaritywhereas that of the polycrystalline MgO sample exhibited a quite asymmetricevolution. This might be attributed to the higher degree of spin polarizationof the epitaxial Fe/MgO(001) tunnel contact, which acts as a spin filter. Ourexperimental results suggest that an epitaxial MgO barrier is beneficial forcreating spins in Si.

Electrical spin injection in p-type Si using Fe/MgO contacts