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We present results of an experimental study of magnetoresistance phenomenon in an amorphous siliconnickel alloys a-Si1-yNiy:H (where y=0.23) on the insulating side of the metal-insulator transition (MIT) in presence of magnetic field up to 4,5T and at very low temperature. The electrical resistivity is found to follow the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T -1/2. This behaviour indicates the existence of the Coulomb gap (CG) near the Fermi level.

Positive magnetoresistance in hydrogenated amorphous alloys silicon nickel a- Si1-yNiy:H at very low temperature with magnetic field