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The Gaia satellite is a high-precision astrometry, photometry andspectroscopic ESA cornerstone mission, currently scheduled for launch in 2012.Its primary science drivers are the composition, formation and evolution of theGalaxy. Gaia will achieve its unprecedented accuracy requirements with detailedcalibration and correction for CCD radiation damage and CCD geometricdistortion. In this paper, the third of the series, we present our 3D SilvacoATLAS model of the Gaia e2v CCD91-72 pixel. We publish e2v's design modelpredictions for the capacities of one of Gaia's pixel features, thesupplementary buried channel (SBC), for the first time. Kohley et al. (2009)measured the SBC capacities of a Gaia CCD to be an order of magnitude smallerthan e2v's design. We have found the SBC doping widths that yield thesemeasured SBC capacities. The widths are systematically 2 {\mu}m offset to thenominal widths. These offsets appear to be uncalibrated systematic offsets ine2v photolithography, which could either be due to systematic stitch alignmentoffsets or lateral ABD shield doping diffusion. The range of SBC capacitieswere used to derive the worst-case random stitch error between two pixelfeatures within a stitch block to be \pm 0.25 {\mu}m, which cannot explain thesystematic offsets. It is beyond the scope of our pixel model to provide themanufacturing reason for the range of SBC capacities, so it does not allow usto predict how representative the tested CCD is. This open question hasimplications for Gaia's radiation damage and geometric calibration models.

Silvaco ATLAS model of ESA's Gaia satellite e2v CCD91-72 pixels