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We report the structural and optical properties of AlxGa1-xN/AlyGa1-yN quantum wells (QWs) structures grown by gas source molecular beam epitaxy with ammonia on sapphire (0001) substrates. QWs structures consist of five pairs of AlyGa1-yN, 0.3xGa1-xN, 0.55 SPIE OPTO PWO 103 2007-01-20|2007-01-25 Integrated Optoelectronic Devices 2007 PW07O 714563 San Jose, California, United States Gallium Nitride Materials and Devices II 6473 Electrical and Optical Characterization 2

Enhanced luminescence from Al x Ga 1-x N/Al y Ga 1-y N quantum wells grown by gas source molecular beam epitaxy with ammonia