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We investigated the optical properties of epitaxial \textit{n}- and\textit{p}-type ZnO films grown on lattice-matched ScAlMgO$_4$ substrates.Chemical doping yielded a severe inhomogeneity in a statistical distribution ofinvolved charged impurities. Two approaches are adopted to treat theinhomogeneity effects; Monte Carlo simulation technique for the\textit{n}-doped films, and the fluctuation theory for the \textit{p}-ZnO. Thebroadening of PL band of \textit{n}-ZnO was significantly larger than predictedby theoretical results in which the linewidths of each individual emissionshave been determined mainly from the concentration fluctuation of donor-typedopants by the simulation. Moreover, the rather asymmetrical line shape wasobserved. To explain these features, a vibronic model was developed accountingfor contributions from a series of phonon replicas. In case of \textit{p}-typeZnO:N, analysis of excitation-intensity dependence of the peak shift ofdonor-acceptor luminescence with a fluctuation model has also proven theimportance of the inhomogeneity effect of charged impurity distribution, as inthe case of ZnO:Ga. We extracted the inhomogeneity in the sample and acceptoractivation energy prepared under the various growth conditions. It is shownthat the theoretical results are in good agreement with the experimental 5-Ktime-resolved luminescence for the systems in a fluctuation field. Finally,localized-state distributions have been studied in N-doped ZnO thin films bymeans of transient photocurrent measurement.Comment: Photonics West 200

Optical properties of n - and p -type ZnO thin films: two different approaches to the impurity distribution inhomogeneity